vs-30.pf1.pbf series, vs-30.pf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 1 document number: 93705 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery rectifier diode, 30 a features ? 150 c max. operatin g junction temperature ? low forward voltage drop and short reverse recovery time ? designed and qualified according to jedec-jesd47 ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition (-m3 only) applications these devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted emi should be met. description the vs-30epf1... and vs-30apf1. .. soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe te mperature and power cycling conditions. product summary package to-247ac, to-247a c modified (2 pins) i f(av) 30 a v r 1000 v, 1200 v v f at i f 1.41 v i fsm 350 a t rr 95 ns t j max. 150 c diode variation single die snap factor 0.6 to-247ac modified to-247ac vs-30apf1... vs-30epf1... 2 1 3 cathode anode base common cathode 2, 4 anode 1 anode 3 base common cathode major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 30 a v rrm 1000 to 1200 v i fsm 350 a v f 30 a, t j = 25 c 1.41 v t rr 1 a, 100 a/s 95 ns t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-30epf10pbf, vs-30apf10pbf vs-30epf10-m3, vs-30apf10-m3 1000 1100 6 vs-30epf12pbf, vs-30apf12pbf vs-30epf12-m3, vs-30apf12-m3 1200 1300
vs-30.pf1.pbf series, vs-30.pf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 2 document number: 93705 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 95 c, 180 conduction half sine wave 30 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 300 10 ms sine pulse, no voltage reapplied 350 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 450 a 2 s 10 ms sine pulse, no voltage reapplied 636 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 6360 a 2 ? s electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 30 a, t j = 25 c 1.41 v forward slope resistance r t t j = 150 c 10.09 m ? threshold voltage v f(to) 0.992 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 6 recovery characteristics parameter symbol test co nditions values units reverse recovery time t rr i f at 30 a pk 25 a/s 25 c 450 ns reverse recovery current i rr 6.1 a reverse recovery charge q rr 2.16 c snap factor s typical 0.6 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.8 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-247ac modified 30epf10 30epf12 case style to-247ac 30apf10 30apf12 i fm t rr dir dt i rm(rec) q rr t t a t b
vs-30.pf1.pbf series, vs-30.pf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 3 document number: 93705 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non- repetitive surge current fig. 6 - maximum non-re petitive surge current 150 0 maximum allowable case temperature (c) average forward current (a) 5 100 10 35 120 130 110 15 25 140 80 30 20 conduction angle 30.pf.. series r thjc (dc) = 0.8 k/w 90 30 60 90 120 180 ? 150 030 maximum allowable case temperature (c) average forward current (a) 40 110 50 120 80 10 20 130 140 30.pf.. series r thjc (dc) = 0.8 k/w ? conduction period 30 60 90 120 180 dc 100 90 10 0 60 0 maximum average forward power loss (w) average forward current (a) 25 40 35 50 30 10 15 5 20 conduction angle 30.pf.. series t j = 150 c rms limit 180 120 90 60 30 30 20 ? 10 0 80 0 maximum average forward power loss (w) average forward current (a) 40 50 20 10 30 30 60 20 40 70 50 rms limit ? conduction period 30.pf.. series t j = 150 c 180 120 90 60 30 dc 350 50 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 200 100 150 250 at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 30.pf.. series 300 150 50 0.01 0.1 peak half sine wave forward current (a) pulse train duration (s) 300 100 200 250 350 400 1 30.pf.. series maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied
vs-30.pf1.pbf series, vs-30.pf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 4 document number: 93705 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 1 024 instantaneous forward current (a) instantaneous forward voltage (v) 100 6 13 t j = 25 c t j = 150 c 30.pf.. series 5 0.7 0 0 50 100 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.4 0.2 0.6 150 30.pf.. series t j = 25 c i fm = 10 a i fm = 5 a i fm = 1 a i fm = 30 a i fm = 20 a 0.5 0.3 0.1 1.2 0 0 50 100 150 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.4 0.6 0.2 0.8 30.pf.. series t j = 150 c i fm = 30 a i fm = 1 a i fm = 20 a i fm = 10 a i fm = 5 a 1.0 6 0 0 50 100 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 3 1 2 4 5 150 30.pf.. series t j = 25 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 0 0 50 100 150 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 2 4 6 8 10 30.pf.. series t j = 150 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a
vs-30.pf1.pbf series, vs-30.pf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 5 document number: 93705 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - recovery current characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 25 0 0 50 100 150 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10 20 5 15 30.pf.. series t j = 25 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 35 15 0 0 50 100 150 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 25 10 20 30.pf.. series t j = 150 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 30 5 0.01 10 0.0001 0.001 0.01 0.1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) 0.1 1 single pulse 30.pf.. series steady state value (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 1
vs-30.pf1.pbf series, vs-30.pf1.-m3 series www.vishay.com vishay semiconductors revision: 20-oct-11 6 document number: 93705 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-30epf10pbf 25 500 antist atic plastic tubes vs-30epf10-m3 25 500 antist atic plastic tubes vs-30apf10pbf 25 500 antist atic plastic tubes vs-30apf10-m3 25 500 antist atic plastic tubes vs-30epf12pbf 25 500 antist atic plastic tubes vs-30epf12-m3 25 500 antist atic plastic tubes vs-30apf12pbf 25 500 antist atic plastic tubes vs-30apf12-m3 25 500 antist atic plastic tubes links to related documents dimensions to-247ac modified www.vishay.com/doc?95253 to-247ac www.vishay.com/doc?95223 part marking information to-247ac modified pbf www.vishay.com/doc?95255 to-247ac modified -m3 www.vishay.com/doc?95442 to-247ac pbf www.vishay.com/doc?95226 to-247ac -m3 www.vishay.com/doc?95007 spice model www.vishay.com/doc?95184 2 - current rating (30 = 30 a) 1 - vishay semiconductors product 3 - circuit configuration: e = single diode a = single diode, 3 pins 4 - package: p = to-247ac/to-247ac modified 5 - type of silicon: f = fast recovery 6 - voltage code x 100 = v rrm - environmental digit: 7 pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant and terminations lead (pb)-free 10 = 1000 v 12 = 1200 v device code 5 1 3 2 4 6 7 30 vs- e p f 12 pbf
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